ワイドヴィル廣田良浩 widevil Yoshihiro Hirota

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Research and analysis of semiconductor technology and market trend
Tutorial, Lecture and Education

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Over the past 10 years, the bit density of NAND flash memory has grown more than 30 times. Our lives are now supported by semiconductor memories and processsors. Japanese semiconductor industry is said to have declined, but more than 30% of the world's NAND flash memory is made in Japan.

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Profile of Yoshihiro Hirota
　 Yoshihiro Hirota was born in 1961 in Kyoto, Japan. He graduated from Kyoto Institute of Technology at 1985, and received a master’s degree from the same university at 1987, with his main study in atomic level crystal structure analysis with High-Resolution Transmission Electron Microscopy. After the graduating from the university, he joined in Sanyo Electric Co., Ltd. at 1987, and started his industry career mainly in CMOS device and process technology. He was working for the device development and process integration of 2.0~0.8 micro meter generation SRAMs and CMOS logic devices such as gate array device in the company. He jointed to Advance Technology Research Laboratories, Sumitomo Metal Industries, Ltd. at 1991. He worked for CMOS process design to develop some image processing LSIs, a CMOS imager and a test DRAM with a planar type capacitor to evaluate Si wafer quality in the company. He was offered to Innotech Corporation for photo pixel design and process integration of a unique CMOS imager with one ring MOSFET in 2000.
　 At 2001, he joined to Tokyo Electron Ltd., and had been a group manager for FEOL process modules development. He worked for SPA, which stands for Slot Plane Antenna plasma process tool, application process development and for propagation of SPA products to customers widely between 2005 and 2009. He was a senior manager and working for FEOL process group leader, Leading edge Process Development Center between 2010 and 2016. He was a Project Leader, Memory Technology Project, and working for Device Technology Planning Dept. in HQ of Tokyo Electron Ltd.
　 He retired from Tokyo Electron Ltd. at September, 2021. He is Representative, Widevil now. And also he is a Program Cordinator, Kyoto Lab for a Greener Future, Kyoto Institute of Technology from September 2022 to now.

Article

High-Resolution Electron Microscopy of BaxK2-xFexTi6-xO13 Crystals in Polar-Glass State:
M. Shiojiri, T. Maeda, Y. Hirota, T. Isshiki, S. Sekimoto, K. Iwauchi and Y. Ikeda, J. Microscopy 142, (1986) 223.
High-Resolution Electron Microscopy of R- and J-type Ferrites in Cellular Random System:
M. Shiojiri, T. Maeda, Y. Hirota, T. Isshiki and S. Sekimoto, Proc. 3rd Japanese-Chinese Seminar on Electron Microscopy (Hangzhou, China, 1985) 51.
HRTEM Observation of Cu-Te Crystals Growth by a Solid-Solid Reaction:
T. Isshiki, T. Maeda, K. Okashita, Y. Hirota, S. Sekimoto and M. Shiojiri, Electron Microscopy 1986, [Proc. XI int. Cong. on Electron Microscopy 34 (1986)] Vol. 1 p865.
HRTEM Observation of Te and Se Crystals:
M. Shiojiri, T. Isshiki, and Y. Hirota, Electron Microscopy 1986, [Proc. XI int. Cong. on Electron Microscopy 34 (1986)] Vol. 1 p821.
HRTEM Observation of Clusters of Polarized Lattice Ions in BaxK2-xFexTi6-xO13 Crystals:
M. Shiojiri, M. Maeda, Y. Hirota, T. Isshiki and S. Sekimoto, Electron Microscopy 1986, [Proc. XI int. Cong. on Electron Microscopy 34 (1986)] Vol. 1 p795.
HRTEM Observation of Magnetic Clusters and Crystal Structures of Spin-Glass BaTi2-xSnxFe4O11:
M. Maeda, Y. Hirota, T. Isshiki, S. Sekimoto and M. Shiojiri, Electron Microscopy 1986, [Proc. XI int. Cong. on Electron Microscopy 34 (1986)] Vol. 1 p793.
HRTEM Investigation of the ZrO2-CaO System:
Y. Hirota, T. Isshiki, M. Maeda, S. Sekimoto and M. Shiojiri, Electron Microscopy 1986, [Proc. XI int. Cong. on Electron Microscopy 34 (1986)] Vol. 2 p1663.
Crystal Structure and Magnetic Properties of BaTi2-xSnxFe4O11:
M. Shiojiri, M. Maeda, T. Isshiki, Y. Hirota, S. Sekimoto, Y. Ikeda and K. Iwauchi, Phys. Stat. Sol. (a) 97 (1986) 231.
Growth and Transformation of Cu-Te Crystals Produced by a Solid-Solid Reaction:
M. Shiojiri, T. Isshiki, K. Okashita, Y. Hirota, M. Maeda and S. Sekimoto, J. Cryst. Growth 83 (1987) 421-430.
High-Resolution Transmission Electron Microscopic Observations of Grain Boundaries and Surface on Cu-Te Crystals Grown by a Solid-Solid Reaction:
M. Shiojiri, T. Isshiki, K. Okashita, Y. Hirota, M. Maeda and S. Sekimoto, Ultramicroscopy 23 (1987) 355-364.
A High-Resolution Transmission Electron Microscopic Study of ZrO2-CaO Films:
M. Shiojiri, Y. Hirota, T. Isshiki, M. Maeda and S. Sekimoto, Thin Solid Films, 162 (1988) 235.
The Growth of CuSe Crystals and the Structure of Cu1-xSe Crystal Produced by a Solid-Solid Reaction:
M. Shiojiri, Y. Hirota, K. Okashita, and S. Sekimoto, Recent Development of Electron Microscopy 1987. [Proc. 4th Chinese-Japanese Electron Microscopy Seminar, Kunming, 1987] (Business Center Academic Soc. Jpn., Tokyo, 1988) p33.
A High-Resolution Electron Microscopy of Solid-Solid Reaction of Chalconide Film:
M. Shiojiri, K. Okashita, Y. Hirota, S. Sekimoto and H. Okabe, Electron Microscopy 1988. [Proc. 4th Asia-Pacific Conf. on Electron Microscopy, Bangkok, 1988] (Electron Mics. Soc. Thailand, Bangkok, 1988) p155.
Structure and Crystallization of Vaccum-Deposited Amorphous Selenium Film:
M. Shiojiri, Y. Hirota, K. Okashita, T. Isshiki and T. Kawamura, Electron Microscopy 1988. [Proc. 4th Asia-Pacific Conf. on Electron Microscopy, Bangkok, 1988] (Electron Microscopy Soc. Thailand, Bangkok, 1988) p235.
High Resolution Transmission Electron Microscopy of Inorganic Materials in Cellular and Toplogical Randam System :
M. Shiojiri, Y. Hirota, T. Isshiki, K. Okashita and S. Sekimoto, J. Electron Microscopy Technique, 12 (1989) 281-295. (Invited paper to “The Electron Microscopy of Japan”)
High-Resolution Electron Microscopy Observation of a Solid-solid Reaction of Tellurium Film with Silver:
M. Shiojiri, T. Isshiki, Y. Hirota and K. Okashita, Bul. Instit. Chem. Res. Kyoto Univ. Vol66 No.5 (1989) 517-529
Surface Profile Images of Te Crystals by High-Resolution Transmission Electron Microscopy:
M. Shiojiri, T. Isshiki and Y. Hirota, Ultra microscopy 30 (1989) 329-336
High-Resolution Electron Microscopic Observation of Crystallization and Decomposition of Amorphous Selenium Films:
Makoto Shiojiri, Yoshihiro Hirota and Toshiyuki Isshiki, J. Electron Microscope Vol. 38 No.5 (1989) 332-339
High-Resolution Transmission Electron Microscopy of Growth and Structure of Ag-Te and Cu-Se Crystals Produced by Solid-Solid Reactions:
Yoshihiro Hirota, Toshiyuki Isshiki, Kazuhiko Okashita and Makoto Shiojiri, J. of Crystal Growth 122 (1991) 55-77,
Nitrogen Profile Study for SiON Gate Dielectrics of Advanced Dynamic Random Access Memory
S. Murakawa, M. Takeuchi, M. Honda, S. Ishizuka, T. Nakanishi, Y. Hirota, T. Sugawara, Y. Tanaka, Y. Akasaka, A. Teramoto, S. Sugawa, and T. Ohmi, Jpn. J. Appl. Phys. 47, 5380 (2008).
Effect of microwave plasma treatment on silicon dioxide films grown by atomic layer deposition at low temperature
T. Tanimura, Y. Watanabe, Y. Sato, Y. Kabe, and Y. Hirota, J. Appl. Phys. 113, 064102 (2013).
Low nickel germanide contact resistances by carrier activation enhancement techniques for germanium CMOS application
Hidenori Miyoshi, Tetsuji Ueno, Yoshihiro Hirota, Junji Yamanaka, Keisuke Arimoto, Kiyokazu Nakagawa, and Takanobu Kaitsuka, Jpn. J. Appl. Phys. 53 04EA05 (2014)

Abstract, Proceeding, Transaction of International Technology Conference

HRTEM Observation of R- and J- type Ferrites in Cellular Random System
M. Shiojiri, T. Maeda, Y. Hirota, T. Isshiki and S. Sekimoto
Abstracts of 3rd Chinese-Japanese Electron Microscopy Seminar (Hanzhou, China, 1985) 4p-01
HRTEM Observation of Cu-Te Crystal Growth by Reaction of Cu- Films and Te Films:
M. Shiojiri, T. Isshiki, K. Okashita, Y. Hirota, T. Maeda and S. Sekimoto
Abstracts of Beijing Symposium on Electron Microscopy (Beijing, China, 1986) p63
A High-Resolution Electron Microscopic Study of a Solid-Solid Reaction of Cu with Se in Thin Film:
M. Shiojiri, Y. Hirota, K. Okashita and S. Sekimoto
Abstracts of Hawaii Seminar on Electron Microscopy (Honolulu Hawaii, USA, 1987) p23
The Growth of CuSe Crystals and Structure of Cu1-xSex Crystals Produced by a Solid-Solid Reaction
M. Shiojiri, Y. Hirota, K. Okashita and S. Sekimoto
Abstracts of 4th Chinese-Japanese Electron Microscopy Seminar (Kunming, China, 1987) p904
Improvement of CVD SiO2 by SPA Plasma Treatment
T. Shiozawa, D. Katayama, D. Tamura, Y. Kabe, T. Kobayashi, Y. Sato, Y. Hirota, and N. Yamamoto,
Proceedings of International Symposium on Dry Process, 2009, p. 177
Improvement of CVD SiO2 by Post Deposition Microwave Plasma Treatment
Kohki Nagata, Hiroaki Akamatsu, Daisuke Kosemura, Tetsuya Yoshida, Munehisa Takei, Maki Hattori, Atsushi Ogura, Tomoyuki Koganezawa, Masatake Machida, Jin-young Son, Ichiro Hirosawa, Toshihiko Shiozawa, Daisuke Katayama, Yoshihiro Sato, and Yoshihiro Hirota
ECS Trans. 2009 19(9): 45-51;
Suppression Mechanism of Volume Shrinkage for SOG Film by Plasma Treatment
Daisuke Kosemura, Munehisa Takei, Hiroaki Akamatsu, Maki Hattori, Tomoyuki Koganezawa, Masatake Machida, Jin-Young Son, Ichirou Hirosawa, Tatsuo Nishita, Toshihiko Shiozawa, Daisuke Katayama, Yoshihiro Sato, Yoshihiro Hirota, and Atsushi Ogura
ECS Trans. 2010 28(2): 347-354
Evaluation of Properties of SiO2 Films Fabricated by Plasma Oxidation
Takuya Yamaguchi, Kohki Nagata, Atsushi Ogura, Tomoyuki Koganezawa, Ichiro Hirosawa, Yoshiro Kabe, Yoshihiro Sato, Shuuichi Ishizuka, and Yoshihiro Hirota
ECS Trans. 2011 41(3): 169-175;
Enhanced Carrier Activation by B and Sb/P Doping for Ge CMOSFET
T. Ueno, H. Miyoshi, Y. Hirota, J. Yamanaka, K. Arimoto, K. Nakagawa, Y.
Hoshi, Y. Shiraki, and T. Kaitsuka,
Ext. Abstr. Int. Conf. Solid State Devices and Materials, 2012, p. 22.
Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
Kohki Nagata, Masaya Nagasaka, Takuya Yamaguchi, Atsushi Ogura, Hiroshi Oji, Jin-Young Son, Ichiro Hirosawa, Yoshimasa Watanabe, and Yoshihiro Hirota
ECS Trans. 2013 53(3): 51-56;
Low NiGe Contact Resistances by Carrier Activation Enhancement (CAE) Techniques for Ge CMOSFETs
Hidenori Miyoshi, Tetsuji Ueno, Yoshihiro Hirota, Junji Yamanaka, Keisuke Arimoto, Kiyokazu Nakagawa and Takanobu Kaitsuka
Ext. Abstr. Int. Conf. Solid State Devices and Materials, 2013, p. 598.
In-situ Contact Formation for Ultra-low Contact Resistance NiGe Using Carrier Activation Enhancement (CAE) Techniques for Ge CMOS
H. Miyoshi, T. Ueno, K. Akiyama, Y. Hirota, and T. Kaitsuka
VLSI Technology Digest of Technical (2014) p146 (T16-4)
Effect of Plasma Process for Sidewall SiO2 Film
Tatsuhiko Tanimura, Hsiao Chihhsiang, Koji Akiyama, Yoshihiro Hirota, *Jun Sato and Takanobu Kaitsuka
ISSM2014 proceedings PO-44

学会発表（国内）

BaxK2-xFexTi6-xO13結晶の高分解能電子顕微鏡観察：
一色俊之、広田良浩、前田尚志、関本　順、塩尻　詢、
日本電子顕微鏡学会第41回学術講演会(1985)
BaTi2-xSnxFe4O11結晶構造と磁性：
前田尚志、一色俊之、広田良浩、関本　順、塩尻　詢、池田靖訓、岩内幸蔵
日本物理学会秋の分科会(1985)
ジルコニア結晶の高分解能電子顕微鏡観察：
広田良浩、一色俊之、前田尚志、関本　順、塩尻　詢、
日本電子顕微鏡学会関西支部昭和60年度学術講演会
BaxK2-xFexTi6-xO13結晶の高分解能電子顕微鏡観察：
一色俊之、広田良浩、前田尚志、関本　順、塩尻　詢、池田靖訓、岩内幸蔵
日本物理学会年会(1986)
Cu-Te系結晶の固相反応成長：
岡下和彦、一色俊之、広田良浩、前田尚志、関本　順、塩尻　詢、
日本物理学会秋の分科会(1986)
安定化ジルコニア結晶の高分解能電子顕微鏡観察：
広田良浩、一色俊之、前田尚志、関本　順、塩尻　詢、
日本物理学会秋の分科会(1986)
テルル薄膜結晶の電子顕微鏡観察：
一色俊之、広田良浩、塩尻　詢、
日本物理学会年会(1987)
Cu-Te系結晶の表面と粒界の電子顕微鏡観察：
岡下和彦、一色俊之、広田良浩、前田尚志、関本　順、塩尻　詢、
日本物理学会年会(1987)
セレン薄膜の高分解能電子顕微鏡観察：
広田良浩、一色俊之、塩尻　詢、
日本物理学会年会(1987)
固-固反応で成長したCu-Te系結晶の粒界と表面の高分解能電子顕微鏡観察：
岡下和彦、一色俊之、広田良浩、前田尚志、関本　順、塩尻　詢
日本電子顕微鏡学会第43回学術講演会(1987)
テルル薄膜結晶の粒界の電子顕微鏡観察：
一色俊之、広田良浩、塩尻　詢
日本電子顕微鏡学会第43回学術講演会(1987)
銅とセレン薄膜の固-固反応の原子格子的研究：
広田良浩、岡下和彦、一色俊之、関本　順、塩尻　詢
日本電子顕微鏡学会第43回学術講演会(1987)
固相反応成長したCu-Se系結晶の電子顕微鏡観察：
広田良浩、岡下和彦、関本　順、塩尻　詢
日本物理学会秋の分科会(1987)
セレン非結晶薄膜の構造：
岡下和彦、広田良浩、塩尻　詢
日本物理学会秋の分科会(1987)
非結晶セレン膜の構造：
塩尻　詢、岡下和彦、広田良浩、一色俊之
日本電子顕微鏡学会第44回学術講演会(1988)
温度ストレスによるAl/Siコンタクト抵抗の経時変化：(Behavior of Al/Si Contact Resistance by Thermal Stress)
廣田良浩、堀井　忠、光嶋康一、土井淳雅
第49回応用物理学会学術講演会 (1988)

Tutorial, lecture and Education etc.

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ナノテスティング学会　ナノテスティングシンポジウム
国立交通大学（台湾）　招待講義
Open Tech Symposium 2018, Kyoto Institute of Technology
パターニング戦略会議
精密工学会・ﾌﾟﾗﾅﾘｾﾞｰｼｮﾝCMPとその応用技術専門委員会　サマーキャンプ
SNIA日本支部次世代不揮発メモリ分科会
京都工芸繊維大学　半導体メモリデバイス特別講座
第67回応用物理学会春季学術講演会　招待講演（COVID-19, 出版のみ）
精密工学会　再招待（COVID-19,未実施）
NEDIA、第1回電子デバイス研修講座（中級編）
26th ASP DAC (Asia and South Pacific Design Automation Conference): Tutorial
NEDIA、第2回電子デバイス研修講座（中級編）
京都工芸繊維大学　半導体メモリデバイス特別講座
NEDIA、第3回電子デバイス研修講座（中級編）
精密工学会・ﾌﾟﾗﾅﾘｾﾞｰｼｮﾝCMPとその応用技術専門委員会・半導体デバイス製造技術基礎セミナー2021
NEDIA、第4回電子デバイス研修講座（中級編）
精密工学会・ﾌﾟﾗﾅﾘｾﾞｰｼｮﾝCMPとその応用技術専門委員会・CMP技術サマーキャンプ 2022
NEDIA、第5回電子デバイス研修講座（中級編）
京都工芸繊維大学、Home Coming Week 『工繊から社会へ』
精密工学会・ﾌﾟﾗﾅﾘｾﾞｰｼｮﾝCMPとその応用技術専門委員会・CMP技術ウインターキャンプ 2022
NEDIA、第6回電子デバイス研修講座（中級編）
精密工学会・ﾌﾟﾗﾅﾘｾﾞｰｼｮﾝCMPとその応用技術専門委員会・CMP技術サマーキャンプ 2023

No.	文献番号	出願番号	出願日	公知日	発明の名称
1	特開2002-190536	特願2001-003960	2001/1/11	2002/7/5	半導体記憶装置、その製造方法及び半導体記憶装置の駆動方法
2	特許3283872	特願2001-114291	2001/4/12	2002/5/20	半導体記憶装置、その製造方法及び半導体記憶装置の駆動方法
3	特開2002-057536	特願2001-156862	2001/5/25	2002/2/22	アナログ・インバータ回路
4	特開2001-324520	特願2001-054461	2001/2/28	2001/11/22	インピーダンス検出回路、インピーダンス検出装置、及びインピーダンス検出方法
5	特開2001-124807	特願2000-260622	2000/8/30	2001/5/11	静電容量－電圧変換装置及び変換方法
6	特開2001-094408	特願2000-217324	2000/7/18	2001/4/6	静電容量型センサ、半導体製造装置および液晶表示素子製造装置
7	特開2001-091205	特願2000-217893	2000/7/18	2001/4/6	物体搭載装置
8	特開2001-035327	特願平11-208153	1999/7/22	2001/2/9	静電容量型近接センサ
9	特開2000-304789	特願平11-110047	1999/4/16	2000/11/2	インピーダンス／電圧変換装置
10	特開2000-304786	特願平11-110021	1999/4/16	2000/11/2	インピーダンス／電圧変換装置及びその変換方法
11	特開2000-180498	特願平10-355947	1998/12/15	2000/6/30	半導体装置の評価方法
12	特開2000-055956	特願平10-226931	1998/8/11	2000/2/25	微小容量測定システム及びプロービングシステム
13	特表2001-510580	特願平11-542367	1999/2/19	1999/8/26	容量検出システム及び方法
14	特表2001-525071	特願平11-542366	1999/2/19	1999/8/26	物理変量の検出装置及び方法
15	特表2000-514200	特願平11-540247	1999/1/22	1999/8/12	インピーダンス－電圧変換装置及び変換方法
16	特表2000-515253	特願平11-538166	1999/1/22	1999/7/29	静電容量－電圧変換装置及び変換方法
17	特開平11-108975	特願平09-269847	1997/10/2	1999/4/23	容量／電圧変換回路及び容量変化検出型センサ装置
18	特開平11-023609	特願平09-179550	1997/7/4	1999/1/29	静電容量型センサ回路
19	特開平11-023608	特願平09-179549	1997/7/4	1999/1/29	静電容量型センサ回路
20	特開平10-190437	特願平09-255178	1997/9/19	1998/7/21	レベルシフト回路
21	特開平10-074791	特願平08-231114	1996/8/30	1998/3/17	半導体装置
22	特開平10-009892	特願平08-185584	1996/6/26	1998/1/16	センサ回路
23	特開平09-321228	特願平08-159019	1996/5/30	1997/12/12	半導体装置の容量素子の配線構造
24	特開平09-289286	特願平08-100953	1996/4/23	1997/11/4	半導体装置の容量素子
25	特開平09-145774	特願平07-305380	1995/11/24	1997/6/6	デバイス劣化評価用半導体装置及びそれを用いたデバイス劣化評価方法
26	特開平09-082962	特願平07-240217	1995/9/19	1997/3/28	入出力保護回路
27	特開平09-074123	特願平07-226851	1995/9/4	1997/3/18	容量評価用半導体装置及び容量素子評価方法
28	特開平09-074122	特願平07-226850	1995/9/4	1997/3/18	半導体装置における容量測定パタ－ン及び容量測定方法
29	特開平08-181306	特願平06-318022	1994/12/21	1996/7/12	ＭＯＳ型半導体装置
30	特開平08-181081	特願平06-318023	1994/12/21	1996/7/12	半導体装置の製造方法
31	特開平08-055892	特願平06-193089	1994/8/17	1996/2/27	配線抵抗測定用半導体装置
32	特開平08-005706	特願平06-135599	1994/6/17	1996/1/12	劣化評価用半導体装置
33	特開平07-066400	特願平05-235820	1993/8/27	1995/3/10	半導体装置及びその製造方法
34	特開平07-066263	特願平05-211952	1993/8/26	1995/3/10	多層金属配線の接触抵抗測定方法並びに半導体装置及び半導体ウエハ
35	特開平07-045697	特願平05-190252	1993/7/30	1995/2/14	半導体装置の製造方法
36	特開平07-029952	特願平05-171561	1993/7/12	1995/1/31	半導体装置及びこれを用いたアライメント検査方法
37	特開平06-268162	特願平05-055338	1993/3/16	1994/9/22	半導体装置及びその製造方法

No.	Pat No.	Priority	Filed	Published	Title
1	US8258571B2?	2007/6/21 JP2007-164371	2008/6/20	2012/9/4	MOS semiconductor memory device having charge storage region formed from stack of insulating films
2	US7161360B2	1999-07-22 JP20829599	2004/12/3	2007/1/9	Electrostatic capacitance sensor, electrostatic capacitance sensor component, object mounting body and object mounting apparatus
3	US8318614B2?	2007/3/26 JP2007079851	2008/3/25	2012/11/27	Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatus
4	US20110053381A1	2008/2/8 JP2008029478	2010/8/4	2011/3/3	Method for modifying insulating film with plasma
5	US20120184107A1?	2009/9/30 JP2009227638	2010/9/29	2012/7/19	Semiconductor device manufacturing method
6	US7176706B2?	2000/11/2 US09/703,845	2007/2/13	2007/2/13	Capacitance measurement method of micro structures of integrated circuits
7	US20170287727A1	2014/9/25 JP2014-194963	2015/7/10	2017/10/5	Metal hard mask and method of manufacturing same
8	US20140034893A1	2012/8/2 JP2012171839A	2013/8/2	2014/2/6	Switch device and crossbar memory array using same
9	US20140038430A1	2012/8/1 JP2012171107A	2013/7/18	2014/2/6	Method for processing object
10	US8241982B2?	2008/5/9 JP2008-123561	2010/11/9	2012/8/14	Semiconductor device manufacturing method
11	US7897498B2	2004/12/28 JP2004-380704	2005/11/29	2011/3/1	Method for manufacturing semiconductor device
12	JP2005286314A	2004/3/1 JP2004056629	2005/2/28	2005/10/13	Method of separating resist film, rework method and device, and device for separating resist film
13	US20100176441A1?	2007/6/7 JP2007-151265	2008/6/6	2010/7/15	Semiconductor memory device and manufacturing method therefor
14	US20100140683A1	2007-03-26 JP2007-79852	2008/3/26	2010/6/10	Silicon nitride film and nonvolatile semiconductor memory device
15	US8247289B2	2005-08-24 JP2005-243180	2006/8/23	2012/8/21	Capacitor and manufacturing method thereof
16	WO2008123289A1	2007-03-26 JP2007079852	2008/3/26	2008/10/16	Silicon nitride film and nonvolatile semiconductor memory device
17	EP1758152A2	2005-08-24 JP2005243238	2006/8/24	2007/2/28	Capacitor and manufacturing method thereof
18	US20070184379A1	2004-03-01 JP2004-056629	2005/3/1	2007/8/9	Peeling-off method and reworking method of resist film
19	JP2007055846A	2005-08-24 JP2005243317A	2005/8/24	2007/3/8	METHOD OF FORMING DIELECTRIC FILM HAVING ABOx TYPE PEROVSKITE CRYSTAL STRUCTURE
20	US6326795B1?	1998/2/19 JP10-078244	1999/2/19	2001/12/4	Capacitance detection system and method
21	JP2001091205A	1999-07-22 JP11-208294 JP20829499	2000/7/18	2001/4/6	Object-loading apparatus
22	JP2002190536A	2000/10/13 JP2000-313399	2001/1/11	2002/7/5	Semiconductor storage device, manufacturing method and driving method thereof
23	JPH09145774A	1995-11-24 JP7305380A	1995/11/24	1997/6/6	Semiconductor device for evaluating device deterioration and device deterioration evaluation method using it
24	US6034549A	1996-10-30 JP28869696	1997/10/29	2000/3/7	Level shift circuit
25	EP0972205B1	1998-02-05 JP2438498	1999/1/22	2006/12/13	Impedance-to-voltage converter and converting method
26	JPH0982962A	1995-09-19 JP7240217A	1995/9/19	1997/3/28	Input-output protective circuit
27	US5973538A	1996-06-26 JP8-185584	1997/6/25	1999/10/26	Sensor circuit
28	JP2001324520A	2000-03-07 JP2000062504	2001/2/28	2001/11/22	Impedance detection circuit, impedance detection device, and impedance detection method
29	JP2001035327A	1999-07-22 JP11208153A	1999/7/22	2001/2/9	Capacitance type proximity sensor
30	EP0980004B1	1998-08-11 JP22693198A	1999/8/11	2006/2/22	Microscopic capacitance measurement system and probing system
31	JP2000180498A	1998-12-15 JP35594798A	1998/12/15	2000/6/30	Operational amplifier circuit and method for evaluating semiconductor device
32	JPH0974123A	1995-09-04 JP22685195A	1995/9/4	1997/3/18	Semiconductor device for capacitance evaluation and evaluation method for capacitor element
33	US10748782B2	2017-10-23 JP2017-204747	2018/10/19	2020/8/18	Method of manufacturing semiconductor device
34	JPH08181081A	1994-12-21 JP6318023A	1994/12/21	1996/7/12	Manufacture of semiconductor device
35	US8687405B2	2011-06-07 JP2011-127522	2012/6/4	2014/4/1	Phase change memory and method for fabricating phase change memory
36	JPH0974122A	1995-09-04 JP22685095A	1995/9/4	1997/3/18	Capacitance measuring pattern and its measuring method for semiconductor device
37	JP2009070919A	2007-09-11 JP2007235733A	2007/9/11	2009/4/2	Plasma oxidation treatment method, and method of forming silicon oxide film
38	JP2000304786A	1999-04-16 JP11002199A	1999/4/16	2000/11/2	Device and method for impedance/voltage conversion
39	JP2001124807A	1998-01-23 JP10-11581	2000/8/30	2001/5/11	Capacitance-voltage conversion device and conversion method
40	JP2007055845A	2005-08-24 JP2005243272A	2005/8/24	2007/3/8	MANUFACTURING METHOD OF DIELECTRIC THIN FILM OF ABOx TYPE PEROVSKITE CRYSTAL STRUCTURE AND ITS MANUFACTURING UNIT
41	JPH11108975A	1997-10-02 JP26984797A	1997/10/2	1999/4/23	Analog inverter circuit, capacity/voltage conversion circuit using the same and capacity change detection type sensor device
42	JP2000304789A	1999-04-16 JP11004799A	1999/4/16	2000/11/2	Impedance/voltage converter
43	JPH0766400A	1993-08-27 JP23582093A	1993/8/27	1995/3/10	Semiconductor and its manufacture
44	JPH1074791A	1996/8/30 JP8231114A	1996/8/30	1998/3/17	Semiconductor device
45	JPH0766263A	1993-08-26 JP21195293A	1993/8/26	1995/3/10	Contact resistance measuring method of multilayered metal wiring, semiconductor device and wafer
46	JPH0729952A	1993/7/12 JP17156193A	1993/7/12	1995/1/31	Mos semiconductor device and alignment inspection by use of same
47	JPH0855892A	1994/8/17 JP19308994A	1994/8/17	1996/2/27	Semiconductor device for measuring wiring resistance